| 摘要 |
A recess-gate type static induction transistor having a high breakdown voltage is provided, which includes an n-type channel region provided over an n+-type drain region, p+-type elongated gate regions provided in grooves of the channel region, n+-type elongated regions formed on the channel region so as to be arranged in parallel with the gate regions, each of which is disposed between the gate regions, and a p+-type guard ring region provided in the channel region and arranged to surround the gate regions. The elongated gate regions are coupled to the guard ring region at both edges. In addition, the outer-most elongated gate regions are coupled to the guard ring region along the longitudinal direction, respectively, thereby increasing the breakdown voltage of the device. Further, gate and source contact pads are provided only on the guard ring region so as to be opposed, thereby reducing unwanted parasitic capacitances between gate and drain regions and between gate and source regions.
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