| 摘要 |
The present invention provides a method for forming a silicon nitride film used for a capacitor dielectric film on a silicon substrate and a poly-silicon layer which comprises steps of forming a first thin silicon nitride film by a rapid thermal nitrogen process and forming a second silicon nitride film on the first thin silicon nitride film to a required thickness by LPCVD. In the LPCVD, a gas which reduces surface reactions is introduced to a growing surface of the silicon nitride film by a means different from a means supplying starting material gases of the silicon nitride film, so as to improve a break down voltage and leakage current of the capacitor silicon nitride film.
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