| 摘要 |
PROBLEM TO BE SOLVED: To obtain a carbon nitride single crystal film having excellent crystallinity useful as tools, wear resistant parts, etc., by forming a single crystal film of AlN, etc., as an intermediate layer on a single crystal substrate, and forming the carbon nitride single crystal film having a specified crystalline structure thereon. SOLUTION: The single crystal film 2 of a solid soln. consisting of hexagonal gallium nitride, aluminum nitride, indium nitride, hexagonal silicon carbide, zinc oxide or materials consisting of >=2 kinds thereof is formed as the intermediate layer on the single crystal substrate 1. The carbon nitride single crystal film 3 which has a crystalline structure ofβ-Si3 N4 type orα-Si3 N4 type and is expressed by the chemical formula C3 N4 is formed on the single crystal film 2. The single crystal film 2 of the intermediate layer is preferably so formed that the (0001) face parallels with the substrate face of the single crystal substrate 1 and that the (0001) face of the carbon nitride single crystal film 3 parallels with the (0001) face of the single crystal film 2. The resulted carbon nitride single crystal film 3 has the excellent crystallinity.
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