Electrostactic discharge protection structure for lightly doped CMOS integrated circuit process

摘要

An electrostatic discharge protection device structure having a lightly doped drain area at the source to allow a faster time to start conduction in an electrostatic discharge event and an abrupt junction at the drain to allow for a low voltage during the conduction of an electrostatic discharge event. The electrostatic discharge protection device structure will be fabricated using standard lightly doped drain CMOS processing.