发明名称 PRODUCTION OF TARGET FOR ITO SPUTTERING
摘要 PROBLEM TO BE SOLVED: To provide a method for stably producing a large area ITO sintered target which is suitable for use in a leaf type sputtering device, has sufficient high density of >97% of theoretical density and is an integrated body without a joint. SOLUTION: Indium oxide powder having 0.8 to 2&mu;m average grain size determined from granularity distribution and 3 to 5m<2> /g BET surface area and tin oxide powder having <=2&mu;m average grain size determined from granularity distribution are used as raw material. The raw materials are blended and then are subjected to a dry type ball mill trestment. A binder is added thereto, the mixture is press-molded and an obtained molding is pulverized again and the grain size is adjusted. The powder is press-molded, an obtained molding is sintered at >=1550 deg.C sintering temp. in a pressurized oxygen atmosphere. When the molding is heated and heated up to the sintering temp., the temp. of the molding is raised to 800 deg.C from room temp. and temp. rising is stopped to keep at 800 deg.C and, thereafter, the temp. using rate to the sintering temp. from 800 deg.C is set at >=350 deg.C per one hour.
申请公布号 JPH09228036(A) 申请公布日期 1997.09.02
申请号 JP19960039701 申请日期 1996.02.27
申请人 MITSUI MINING & SMELTING CO LTD 发明人 KOGA YOICHI;YUKIMASA TOSHIAKI
分类号 C04B35/457;C23C14/34 主分类号 C04B35/457
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