发明名称 |
Optical functional semiconductor element |
摘要 |
An optical functional semiconductor element which performs ultrafast, high-contrast logic operation through utilization of the high speed of light velocity. A resonant-tunneling diode having a negative resistance characteristic is provided apart from a light absorbing layer formed by one of i-type layers of what is called a triangular barrier diode of an nipin or pinip structure, by which as the quantity of incident light increases, the quantity of transmitted current is switched from increase to decrease, the amount of change is made high-contrast and an ultrafast logic operation can be performed.
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申请公布号 |
US5663572(A) |
申请公布日期 |
1997.09.02 |
申请号 |
US19950406501 |
申请日期 |
1995.03.20 |
申请人 |
KOKUSAI DENSHIN DENWA KABUSHIKI KAISHA |
发明人 |
SAKATA, HARUHISA;UTAKA, KATSUYUKI;MATSUSHIMA, YUICHI |
分类号 |
G02F3/02;G02F1/015;G02F1/017;H01L27/15;H01L29/205;H01L29/68;H01L29/88;H01S5/00;H01S5/026;H01S5/40;H01S5/50;(IPC1-7):H01L29/06 |
主分类号 |
G02F3/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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