发明名称 Optical functional semiconductor element
摘要 An optical functional semiconductor element which performs ultrafast, high-contrast logic operation through utilization of the high speed of light velocity. A resonant-tunneling diode having a negative resistance characteristic is provided apart from a light absorbing layer formed by one of i-type layers of what is called a triangular barrier diode of an nipin or pinip structure, by which as the quantity of incident light increases, the quantity of transmitted current is switched from increase to decrease, the amount of change is made high-contrast and an ultrafast logic operation can be performed.
申请公布号 US5663572(A) 申请公布日期 1997.09.02
申请号 US19950406501 申请日期 1995.03.20
申请人 KOKUSAI DENSHIN DENWA KABUSHIKI KAISHA 发明人 SAKATA, HARUHISA;UTAKA, KATSUYUKI;MATSUSHIMA, YUICHI
分类号 G02F3/02;G02F1/015;G02F1/017;H01L27/15;H01L29/205;H01L29/68;H01L29/88;H01S5/00;H01S5/026;H01S5/40;H01S5/50;(IPC1-7):H01L29/06 主分类号 G02F3/02
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