发明名称 |
Pattern writing method during X-ray mask fabrication |
摘要 |
A pattern writing method for X-ray mask fabrication including forming a uniform membrane layer on an X-ray absorbing layer and forming an etch mask on the layer of X-ray absorbing material including the steps of providing a layer of material sensitive to radiation. The layer of material has internal stresses which are altered by exposure to the radiation. The material is exposed in associated areas (e.g. a spiral) such that the internal stresses within the layer of material and altered internal stresses in the associated areas are substantially offset to reduce distortion in the X-ray mask.
|
申请公布号 |
US5663018(A) |
申请公布日期 |
1997.09.02 |
申请号 |
US19960654457 |
申请日期 |
1996.05.28 |
申请人 |
MOTOROLA |
发明人 |
CUMMINGS, KEVIN D.;JOHNSON, WILLIAM A.;LAIRD, DANIEL L. |
分类号 |
G03F1/16;G03F1/14;G03F7/20;H01L21/027;(IPC1-7):G03F9/00 |
主分类号 |
G03F1/16 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|