Method for forming contact holes in semiconductor device

摘要

A method for forming contact holes in a semiconductor device, involving formation of a ring-shaped pad at a contact region. The ring-shaped pad is used as an etch barrier film upon forming a contact hole. The use of such a ring-shaped pad enables easy formation of a contact hole with a critical dimension. In accordance with this method, it is possible to increase a process margin upon the formation of contact holes for providing contacts with a critical dimension while maintaining an insulation between neighboring conductors.