| 摘要 |
<p>A process for forming titanium silicide layers on semiconductor device silicon regions which have native oxide thereon utilizes a reactively sputter deposited layer of TiHx≤2 followed by a rapid thermal anneal in a nitrogen bearing gas. The same process produces a titanium nitride/titanium silicide bilayer on silicon, and a titanium nitride/titanium bilayer on silicon dioxide.</p> |
