Verfahren zur Herstellung von MOS-Leistungstransistoren mit vertikalem Strom,申请号DE1990629942T-传众专利搜索

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发明名称	Verfahren zur Herstellung von MOS-Leistungstransistoren mit vertikalem Strom
摘要
申请公布号	DE69029942(T2)	申请公布日期	1997.08.28
申请号	DE1990629942T	申请日期	1990.10.16
申请人	SGS-THOMSON MICROELECTRONICS S.R.L., AGRATE BRIANZA, MAILAND/MILANO, IT;CONSORZIO PER LA RICERCA SULLA MICROELETTRONICA NEL MEZZOGIORNO, CATANIA, IT	发明人	ZAMBRANO, RAFFAELE, I-84085 MERCATO SAN SERVERINO (SALERNO), IT;MAGRO, CARMELO, I-95121 CATANIA, IT
分类号	H01L21/336;H01L29/10;H01L29/78;(IPC1-7):H01L21/336;H01L29/772	主分类号	H01L21/336
代理机构		代理人
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