发明名称 Semiconductor gas sensor
摘要 The sensor has a laser structured metal oxide layer formed on a substrate. The metal layer is structured so that at least two electrodes interleave in comb form and their outer sections are enclosed by heater structures. The electrode terminals for both electrodes (4, 5) and heaters (1, 3) are located at the corners of the substrate. Several arrangements can be provided on the substrate next to one another. Connections for the heating system can be located in the external edge of the substrate and at least at two points the heater resistance can be adjusted by laser cuts.
申请公布号 DE19606272(A1) 申请公布日期 1997.08.28
申请号 DE19961006272 申请日期 1996.02.21
申请人 UST UMWELTSENSORTECHNIK GMBH, 98716 GERABERG, DE 发明人 KIESEWETTER, OLAF, DR., 98716 GESCHWENDA, DE;ROTH, KLAUS, DR., 98716 GERABERG, DE;REINHOLZ, ALBERT, 98704 WUEMBACH, DE
分类号 G01N27/12;(IPC1-7):G01N27/12;H01L49/00 主分类号 G01N27/12
代理机构 代理人
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