发明名称 CHEMICAL VAPOR DEPOSITION METHOD AND CHEMICAL VAPOR DEPOSITION APPARATUS
摘要 <p>A chemical vapor deposition method for forming a thin film on a substrate comprises the steps of introducing a reactive gas into a reaction chamber in which the substrate is held, causing charged particles to adhere to components constituting the reactive gas to ionize them, and generating electrostatic deposition of ionized film forming components on the substrate in an electric field. The charged particles are preferably photoelectrons or positive or negative ions produced by electric discharge. The reactive gas introduced into the reaction chamber is a raw material gas containing the film forming components alone, or an oxidizing or reducing gas reacting with the raw material gas in addition to this raw material gas.</p>
申请公布号 WO1997031391(P1) 申请公布日期 1997.08.28
申请号 JP1997000481 申请日期 1997.02.21
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