发明名称 |
Halbleiterchip und Verfahren zu seiner Herstellung |
摘要 |
A power supply wiring arrangement of a semiconductor integrated circuit formed on a semiconductor chip (40), characterized by a) a plurality of pairs of metal bumps (44) formed on the semiconductor chip (40), b) a plurality of conductor strips (50) each extending between the bumps forming each of said pairs of metal bumps (44), and c) a plurality of thick-layer wiring strips (48) directly connected to selected ones of said metal bumps (44) and said conductor strips (50), said thick-layer wiring strips being substantially identical in material and in thickness to said metal bumps (44). o |
申请公布号 |
DE68928193(D1) |
申请公布日期 |
1997.08.28 |
申请号 |
DE1989628193 |
申请日期 |
1989.09.25 |
申请人 |
NEC CORP., TOKIO/TOKYO, JP |
发明人 |
MISAWA, HIROYUKO, MINATO-KU TOKYO, JP |
分类号 |
H01L23/52;H01L21/3205;H01L21/60;H01L21/82;H01L21/822;H01L23/528;H01L27/04;H01L27/118;(IPC1-7):H01L23/522;H01L23/50 |
主分类号 |
H01L23/52 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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