发明名称 Solid-state antenna switch and field-effect transistor
摘要 <p>A field-effect transistor has a covering electrode overlying at least part of the transistor's channel. The covering electrode is formed on an insulating layer that covers the source, gate, and drain of the transistor. One voltage is applied to the covering electrode when the field-effect transistor is switched on. Another voltage is applied when the field-effect transistor is switched off, creating an electric field that hinders current flow in the channel. In an antenna switch, this type of transistor couples an antenna to a receiving circuit, and another transistor couples the antenna to a transmitting circuit. &lt;IMAGE&gt;</p>
申请公布号 EP0792028(A2) 申请公布日期 1997.08.27
申请号 EP19970101898 申请日期 1997.02.06
申请人 OKI ELECTRIC INDUSTRY CO., LTD. 发明人 INOKUCHI, KAZUYUKI
分类号 H01L21/822;H01L21/338;H01L27/04;H01L29/812;H01Q1/00;H01Q3/00;H01Q23/00;H03K17/687;H04B1/40;H04B1/48;(IPC1-7):H04B1/48 主分类号 H01L21/822
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