| 摘要 |
A high efficiency vertical cavity surface emitting laser (10) including a substrate (12), a first mirror stack (14) having p-type conductivity positioned thereon, a second mirror stack (40) formed of deposited dielectric material, and a cavity (16) positioned therebetween, including an active region (16) positioned between a first cladding layer (18) and a second cladding layer (22). A contact region (24) having n-type conductivity is positioned on the second cladding layer (22), with both forming a mesa structure. An electrical contact (32) engages the contact region (24) and defines a central light emission aperture (34). The device is grown on a p-type substrate. <IMAGE> |
