发明名称 HIKARIKIDENRYOKUSOCHI
摘要 PURPOSE:To improve a photovoltaic device in output characteristics by a method wherein light absorption characteristics and electrical field distribution characteristics are made nearly proportional to each other in a semiconductor optically active layer. CONSTITUTION:A transparent electrode film 2 of light transmissive conductive oxide(TCO) such as ITO, SnO2, or the like, a P-type layer 3 of amorphous silicon, amorphous silicon carbide, or the like, an i-type layer 4 and an N-type layer 5 both functioning as an optically active layer, and a back electrode of metal such as Al, Ag, or the like are laminated in this order on a substrate 1 of light transmissive material such as glass, heat resistant plastic, or the like. In this constitution, the light absorption characteristics and the electrical field distribution characteristics of the i-type layer 4 are nearly proportional to each other. By enbaling light absorption characteristics and electrical field distribution characteristics to be nearly proportional to each other, the recombination of electrons and holes is lessened throughout the whole induced optical carriers, so that nearly all induced optical carriers can be extracted.
申请公布号 JP2647969(B2) 申请公布日期 1997.08.27
申请号 JP19890157365 申请日期 1989.06.20
申请人 SANYO DENKI KK 发明人 IWAMOTO MASAYUKI;MINAMI KOJI;WATANABE KANEO
分类号 H01L31/04 主分类号 H01L31/04
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