发明名称 |
Titanium nitride barrier layers |
摘要 |
An improved titanium nitride barrier layer that prevents spiking between an overlying aluminum layer and a silicon substrate is formed by first sputter depositing a titanium layer onto the substrate, forming an oxygen-containing titanium layer thereover, and sputter depositing a titanium nitride layer over the oxygen-containing layer. The oxygen-containing layer can be formed in an oxygen-containing plasma, or titanium can be sputtered in the presence of oxygen. The titanium nitride layer can also be treated with an oxygen-containing plasma. Robust titanium nitride barrier layers are formed that can prevent spiking by an overlying aluminum contact layer, even after heat treatment up to 550 DEG C. <IMAGE> |
申请公布号 |
EP0791663(A1) |
申请公布日期 |
1997.08.27 |
申请号 |
EP19970301256 |
申请日期 |
1997.02.26 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
FU. JIANMING;CHEN, FUSEN;XU, ZHENG |
分类号 |
C23C14/06;C23C14/16;H01L21/28;H01L21/285;H01L21/768;H01L23/522 |
主分类号 |
C23C14/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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