| 摘要 |
<p>This invention relates to an improvement of a high power mos device which includes a plurality of power MOSFETs whose drain regions and source regions are respectively connected in common with each other and respectively receive on-off control voltages to the respective gate regions, and circuits for generating the control voltages. When short-circuiting occurs between the gate and the source in either of these power MOSFETs, a gate current detection and interruption circuit is inserted between a control voltage source and the gate so as to interrupt the supply of the control voltage to the gate. With such an arrangement it becomes possible to dissolve adverse effect due to the short-circuiting between the gate and the source, which was not possible in the prior device of this kind, and to improve the reliability of the monolithic power MOSIC device. <IMAGE></p> |
