| 摘要 |
In the method of fabricating a TFT in accordance with the present invention, a first semiconductor layer 37 to be used as a channel is formed on a portion of an insulating layer 35 in correspondence with an underlying gate electrode 33. A second semiconductor layer 34, ohmic contact layer 41 and metal layer 45 are then successively formed on the insulating layer 35 and first semiconductor layer 37. A photoresist pattern is next formed on a portion of the ohmic contact layer other than a portion corresponding to the gate electrode. The metal layer is patterned using the photoresist pattern to form source 43 and drain 45 electrodes, and the ohmic contact layer 41 and second semiconductor layer 39 are removed using the photoresist pattern as a mask, or using the source and drain electrodes as a mask, to expose portions of the insulating layer and first semiconductor layer. A passivation layer 47 is formed to cover the insulating layer, first semiconductor layer, and source and drain electrodes. A contact hole 49 is formed in the passivation layer, followed by formation of a pixel electrode 51 in electrical contact with the drain electrode through the contact hole. |
