| 摘要 |
PURPOSE:To prevent breaking of a metal wiring in a through hole by making a silicon oxide film through a plasma vapor-phase epitaxy method of the upper layer out of layer insulation films of a sandwich structure into that with a low film density. CONSTITUTION:An insulating film 102 is formed on a single-crystal silicon substrate 101, an aluminum film is formed on the insulating film, and an aluminum wiring 103 is formed by etching. Then, there is formed a compact first silicon oxide film 104 with a large film density covering the insulating film 102 and aluminum wiring 103. Subsequently, an organic siloxane polymer layer 105 is formed and a sparse second silicon oxide film 106 with a small film density is formed on the polymer layer. Further, when a heat treatment for about 10 minutes is conducted at 400 deg.C in nitrogen atmosphere, an impurity gas in the organic siloxane polymer layer 105 is released through the second silicon oxide film 106. |
