| 摘要 |
Method of fabricating a thin film transistor with relatively low off-current by: (a) forming a TFT body comprising gate electrode, gate dielectric, semiconductor, doped semiconductor, source/drain metal layers; (b) forming a channel region in the TFT body by etching source/drain doped semiconductor, and a portion of semiconductor so as to form source and drain electrodes; (c) passivating the channel first wet etch, second dry etch, third wet etch, treating with a cleansing solution and annealing. |
