Semiconductor integrated circuit

摘要

In an integrated circuit comprising an IIL and a high frequency npn bipolar transistor which has a deep p--type base region 45 for its inverted npn output transistors, circuit elements such as a resistor part R, a capacitor part C, a diode part D and an isolated crossing connection part Cr are provided with deep p--type regions 54, 54', 65', 71 and 82 which are formed at the same time with the p--type region 45 in the IIL, and thereby, reliability of the circuit elements as well as characteristic thereof are improved, thereby further improving manufacturing yields.