Semiconductor device having a t-shaped field oxide layer and a method for fabricating the same

摘要

A semiconductor device having an adjacent P-well and N-well, such as a complementary metal oxide semiconductor (CMOS) transistor, on a silicon on insulator (SOI) substrate has a latch-up problem caused by the parasitic bipolar effect. This invention provides a semiconductor device removing the latch-up problem and methods for fabricating the same. A semiconductor device according to the present invention has a T-shaped field oxide layer connected to a buried oxide layer of the SOI substrate to prevent the latch-up problem.