| 摘要 |
PROBLEM TO BE SOLVED: To improve stability of cell operation, by forming a side transistor connected with a gate electrode edge of an access transistor. SOLUTION: A first gate electrode 106 is formed on an active region on a substrate 100 and a specified part on a field oxide film 102. An insulating film 110 is grown on the active region on the substrate 100 containing the first gate electrode 106. A second polysilicon film 114 is so etched that a first gate electrode edge region where a via contact 112 is not formed and the insulating film 110 on a substrate 100 of edge region side are exposed, and a second gate electrode of a side transistor is formed. Side wall spacers 118 are formed on the first gate electrode side surface of bit line side and the second gate electrode side surface of cell node side. As a result, a drain region 124 is formed in the substrate 100 of the bit line side, and a source region 126 is formed in the substrate 100 of the cell node side. |
