| 摘要 |
PROBLEM TO BE SOLVED: To obtain a semiconductor device having a fine storage device suitable for high level of integration, by adding elements forming oxide to a lower conductive film of a ferroelectic capacitor forming the ferroelectric film on the lower conductive film containing platinum as the main component, and segregating the elements into the grain boundary of the platinum thin film. SOLUTION: This device is provided with a substrate, a lower conductive film 62 which is formed on the substrate and contains platinum as the main component, and an upper conductive layer formed on the lower conductive film 62. The upper conductive film, the lower conductive film 62 and a ferroelectric film 63 constitute a capacitor. Elements for forming oxide are added to the lower conductive film 62, and segregated into the grain boundary of a platinum thin film. At the time of forming the ferroelectric thin film, or of heat treatment in an oxygen atmosphere necessary for crystallization, oxygen diffusion in the platinum film is mainly generated in the crystal grain boundary. The oxygen diffusion is captured by oxidizing iron or the like segregated into the crystal grain boundary of platinum, and oxygen diffusion of the platinum film itself is restrained, so that a conductive layer for preventing diffusion is not oxidized. |
