Thin film device and a method for fabricating the same

摘要

A thin film device includes a substrate, a conductive oxide film formed on the substrate, and a metal film formed on the substrate and in contact with at least a part of the conductive oxide film. The metal film includes aluminum and a metallic material. The metallic material has a standard electrode potential higher than the standard electrode potential of the aluminum so that the standard electrode potential of the metal film is higher than the reduction potential of the conductive oxide film.