| 发明名称 |
Chemical amplification resist and a fabrication process of a semiconductor device that uses such a chemical amplification resist |
| 摘要 |
A chemical amplification resist contains a polymer of adamantyl group and aliphatic ester, wherein the aliphatic ester has a carbonyl group such that the chemical amplification resist generates carboxylic acid upon exposure to radiation.
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| 申请公布号 |
US5660969(A) |
申请公布日期 |
1997.08.26 |
| 申请号 |
US19960607250 |
申请日期 |
1996.03.04 |
| 申请人 |
FUJITSU LIMITED |
发明人 |
KAIMOTO, YUKO |
| 分类号 |
G03F7/004;C08F20/10;C08F220/16;C08K5/07;G03F7/039;H01L21/027;(IPC1-7):G03F7/00 |
主分类号 |
G03F7/004 |
| 代理机构 |
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代理人 |
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| 地址 |
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