发明名称 ANTIREFLECTION COMPOSITION AND RESIST PATTERN FORMING METHOD
摘要 PROBLEM TO BE SOLVED: To obtain a compsn. giving a satisfactory antireflection film having low dry etching resistance by incorporating two or more kinds of specified compds. including a coating film forming material. SOLUTION: This compsn. contains two or more kinds of compds. including a coating film forming material. The difference in solubility to a solvent between the compds. in a coating film is increased by heating and/or irradiation with light after coating. The increased difference is >=5 times, preferably >=10 times so as to dissolve and remove only the desired one of the compds. and to leave the desired coating film forming material. The coating film forming material is, e.g. a combination of a compd. whose solubility to water is reduced by heating, e.g. PVA with a compd. whose solubility to water is not varied by heating, e.g. polyacrylic acid.
申请公布号 JPH09222726(A) 申请公布日期 1997.08.26
申请号 JP19960030539 申请日期 1996.02.19
申请人 MITSUBISHI CHEM CORP 发明人 NISHI MINEO;TERAMOTO MASASHI
分类号 G03F7/004;G03F7/11;G03F7/38;H01L21/027;(IPC1-7):G03F7/004 主分类号 G03F7/004
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