| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing a ZnSe single crystal capable of growing, in a solid phase, not only ZnSe polycrystals produced by a vapor phase method, such as CVD method or PVD method but the ZnSe polycrystals produced by a high-pressure melting method as well. SOLUTION: The ZnSe polycrystals 1 produced by the vapor phase method or high-pressure melting method are put together with Zn or Se into a airtight heat resistant vessel 2 and this vessel 15 vacuum sealed. The vessel is then packed into a carbon vessel 3 and is heated to a temp. above the phase transition point (1400 deg.) of ZnSe and below the m. p. (1550 deg.C) and is kept at this temp. for 2 to 10 hours in an electric furnace 4 controlled in heating; thereafter, the polycrystals are cooled at a rate of 50 to 200 deg.C/hour, by which the single crystal is formed. |
