| 摘要 |
<p>PROBLEM TO BE SOLVED: To enable uniformly attracting a wafer by making the sum of boundary lines between attracting electrodes making pairs larger than the specified times the diameter of a substratum, and almost uniformly arranging the paired attracting electrodes in the circumfential direction. SOLUTION: Boundary lines 17 exist in all the lattice type boundary parts 16. The sum of the lengths becomes the length L of the boundary lines 17. The length L of the boundary lines 17 is about 10 times the diameter D of a substratum 11. By making the length L of the boundary lines 17 larger than twice the diameter D of the substratum 11, a first attracting electrode 12 and a second attracting electrode 13 are uniformly arranged. The first attracting electrode 12 and the second attracting electrode 13 are divied into a plurality of segments, and are uniformly arranged in the circumferential direction. When the electrodes are used in a plasma atmosphere, a wafer can be uniformly attracted, so that workability of a wafer in a semiconductor manufacturing process is made uniform, and a semiconductor device excellent in characteristics can be manufactured with high yield.</p> |
