| 摘要 |
A method for forming a set of p-channel devices with enhanced n-doping and penetration of boron into the channel region between the source and drain regions, thereby creating channel length independent p-channel threshold voltage behavior. Long channel and short channel transistors have approximately equal threshold voltages as (a) short channel effect is reduced with increased n-doping in short channel transistors (where boron penetration has little effect), and (b) the effects of boron penetration and increased n-doping are offset in longer channel transistors.
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