发明名称 |
Silicon carbide MOSFET |
摘要 |
A silicon carbide MOSFET (10) is formed to have a high breakdown voltage. A breakdown enhancement layer (20) is formed between a channel region (14) and a drift layer (12). The breakdown enhancement layer (20) has a lower doping concentration that increases the width of a depletion region (24) near a gate insulator (17). The increased depletion region width improves the breakdown voltage.
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申请公布号 |
US5661312(A) |
申请公布日期 |
1997.08.26 |
申请号 |
US19950413319 |
申请日期 |
1995.03.30 |
申请人 |
MOTOROLA |
发明人 |
WEITZEL, CHARLES E.;BHATNAGAR, MOHIT |
分类号 |
H01L29/12;H01L29/24;H01L29/78;(IPC1-7):H01L31/031 |
主分类号 |
H01L29/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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