| 摘要 |
PROBLEM TO BE SOLVED: To provide an electrode plate for plasma etching by which the temp. distribution on the plasma producing face of the electrode plate is uniformized by uniformly and stably cooling the plate and a semiconductor wafer is etched at a uniform rate and consisting of a vitreous carbon and to provide the producing method therefor. SOLUTION: This electrode plate for plasma etching consists of a flat vitreous carbon with the warpage of the plate face controlled to <=0.3mm. The electrode plate is produced by forming a thermosetting resin into a plate, curing and then heating the formed plate in a nonoxidizing atmosphere, calcining and carbonizing the product, heat-treating the obtained vitreous carbon plate at 1400-3000 deg.C in a gaseous halogen atmosphere and then grinding the treated plate. |
