发明名称 FORMATION OF PROGRAM PATTERN FOR MASK ROM
摘要 PROBLEM TO BE SOLVED: To prevent erroneous program writing by suppressing variations in the size of regions (program regions) to be programmed within memory cells. SOLUTION: Data on a program region is corrected depending on whether or not ambient program regions are open, and the program pattern is formed with use of the connected data. When the program region coincides with a memory cell 10, fluctuations in the program region becomes larger, which is especially valid. In this case, the data correction is carried out preferably over the program regions of isolated remaining and missing patterns having great pattern width variations. In addition, the correction may be made over the other program regions. When such correction is carried out as to cancel the pattern width variations, the size of the program regions can be made uniform. Therefore, a margin necessary for overlap width of the transistor with a channel region 22 can be easily secured, thus enabling prevention of erroneous program writing.
申请公布号 JPH09223751(A) 申请公布日期 1997.08.26
申请号 JP19960030722 申请日期 1996.02.19
申请人 SONY CORP 发明人 YAMADA HIROYUKI
分类号 H01L21/822;H01L21/82;H01L21/8246;H01L27/04;H01L27/112 主分类号 H01L21/822
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