| 摘要 |
PROBLEM TO BE SOLVED: To provide a high efficiency switching transistor which is formed into a microminiaturization with a high operation speed and high input impedance and greater mutual conductance Gm, and further with high integration. SOLUTION: A MOS gate is formed on a Schottky junction 5, and for example the thickness of Schottky metal 2 is made extremely thin whereby electric resistance in the vicinity of the Schottky junction part just under the MOS gate is made higher. Hereby, the equivalent height of a Schottky barrier in the vicinity of a MOS interface is altered owing to application of gate voltage. Hereby, a current flowing through the Schottky junction located in the vicinity of the MOS interface is mainly constructed with a current due to a flow of a carrier moving beyond the Schottky barrier. |
