| 摘要 |
In method of manufacturing a DRAM by using a laminate SOI technique, which makes it possible to form a thin semiconductor film of a uniform thickness, the method includes steps of forming a step portion on a major surface of a silicon substrate, forming an insulating film on the major surface of the silicon substrate, forming a capacitor which is connected to the step potion through a contact hole formed through the insulating film on the step portion, grinding the silicon substrate from the other major surface thereof after a support substrate is laminated onto the silicon substrate to remain the step portion, forming a thin silicon film on the insulating film by lateral epitaxial growth process based on the silicon of the remaining step portion serving as a seed for the lateral epitaxial growth, and forming a MOS transistor in the thin silicon film.
|
