发明名称 |
Transistor structure and method for fabricating the same |
摘要 |
A transistor including an insulating film, a gate, and a source/drain all formed on a semiconductor substrate, wherein the gate overlaps at an edge thereof with the source/drain disposed below the gate, whereby the transistor has a structure capable of avoiding a direct contact between the metal wiring and the source/drain. The gate is formed after a formation of the source/drain.
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申请公布号 |
US5661327(A) |
申请公布日期 |
1997.08.26 |
申请号 |
US19960665048 |
申请日期 |
1996.06.12 |
申请人 |
HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. |
发明人 |
PARK, SANG HOON |
分类号 |
H01L23/522;H01L21/265;H01L21/336;H01L21/768;H01L29/08;H01L29/417;H01L29/78;(IPC1-7):H01L29/76;H01L29/94;H01L31/062;H01L31/113 |
主分类号 |
H01L23/522 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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