| 摘要 |
PROBLEM TO BE SOLVED: To easily make an amorphous region single crystal, the region being formed in a semiconductor layer by constructing a support substrate and the semiconductor layer such that their crystal plane orientations are the same each other, and that crystal axis directions are rotated by angles within specific ranges. SOLUTION: In a thin single crystal semiconductor layer (SOI layer) 3 on which a semiconductor device is formed, crystal axis directions are rotated each other by angles falling within 45±4 degree. An orientation flat is set such that the crystal axis is directed to be a normal surface with respect to <100>. Hereby, an amorphous region is easily made single crystal with a heat treatment. In this case, provided the orientation flat of the semiconductor layer 3 falls within ±2 degree with respect to a normal direction to the <100> as in the case of the support substrate, an amorphous region is made single crystal without trouble even when the orientation flat is displaced. |
