发明名称 MEMORY INTERFACE METHOD AND CIRCUIT FOR VARIABLE LENGTH DECODER
摘要 <p>PROBLEM TO BE SOLVED: To reduce the complication of a signal processing by memory access by writing inputted data in an internal memory after acceptance signals are generated. SOLUTION: A read control part 15 generates read chip enable signals and a read address from first request signals outputted from a VLD 21, and when the read address reaches a prescribed level, generates second request signals and supplies them to an external memory controller 13. Then, when the acceptance signals to the second request signals are generated from the external memory controller 13, a write control part 17 generates a write address and write section signals from the acceptance signals. Further, an internal memory control part 19 performs control so as to write the data supplied from an external memory 11 corresponding to the write address and the write section signals generated from the write control part 17. In this case, utilization can be performed as a buffer controller corresponding to the speed of the input data as well.</p>
申请公布号 JPH09223973(A) 申请公布日期 1997.08.26
申请号 JP19960270307 申请日期 1996.10.11
申请人 SAMSUNG ELECTRON CO LTD 发明人 CHIN DAII
分类号 H04N19/423;H03M7/40;H03M7/42;H04N1/41;H04N7/24;H04N19/00;H04N19/44;H04N19/91;(IPC1-7):H03M7/40 主分类号 H04N19/423
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