| 摘要 |
<p>PROBLEM TO BE SOLVED: To easily promote a successive process by forming a step moderating pattern where there is reduced a step between a substrate from which an active region is exposed and an edge of a field oxide film. SOLUTION: An oxidization prevention film pattern 120b exposed on a substrate 110 and a pad insulating film pattern 115a on a lower part of the former are removed with a wet etching process whereby an opening is formed to expose a device activation process of the substrate 110. Then, in order to moderate a step on an edge part of a field oxide film 125 an etched back insulating film 130a is removed with a wet pattern whereby a step moderation pattern 140 is formed on the edge of the field oxide film 125 for moderating the step. Hereby, a succesive process, for example, a gate oxide formation process is facilitated.</p> |
