| 摘要 |
A method for non-active processing of an etched surface in a vertical-cavity surface-emitting laser diode is provided. In order to obtain a stable single fundamental transverse mode, at a low temperature of 100 to 300 degrees, an amorphous GaAs is deposited on a surface of an etched active layer and an etched cavity. Also, a bottom emitting laser is provided which is formed by, with the metal electrode as a mask, etching the top mirror layer and the active layer, depositing the amorphous GaAs onto the etched portion and planarizing the deposited GaAs layer and depositing p-type metal pad over the amorphous GaAs around the formed laser device. Also, a top emission type laser is provided which is formed by, with a photoresist as a mask, etching the top mirror layer and the active layer, planarizing the GaAs layer and depositing p-type metal pad containing a window for light emission which is made smaller than laser area over the amorphous GaAs around the formed laser device. Thus, a more stable single fundamental transverse mode than in the conventional device can be obtained.
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