| 摘要 |
<p>PURPOSE:To form the thin-film transistor(TFT) by depositing a silicon thin film on an insulating material at a specific temp. and subjecting this film to a heat treatment to form a silicon oxide layer. CONSTITUTION:High melting glass is used as a transparent substrate and is treated at <=600 deg.C. Namely, the silicon thin film is first formed on the substrate 33 and is photoetched and thereafter, its surface is oxidized in an O2 plasma atmosphere in a low-temp. process. Consequently, an oxidized film 41 which serves as a gate insulating film is formed on the silicon thin film 40. The silicon thin film of a second layer is thereafter deposited and is photoetched. The oxidized film 41 is then etched to form the gate insulating film 41 with the silicon thin film 45 of the second layer as a mask and simultaneously, the film is windowed for diffusion. The diffusion is executed by ion implantation to form a source and drain 42 and 43. The plasma oxidized film 46 is thereafter formed on the surface by executing a plasma treatment again in an O2 atmosphere and is annealed at 400 to 600 deg.C.</p> |
