| 摘要 |
PURPOSE:To enable the manufacture of a diamond semiconductor device that utilizes the PN junction by using a diamond that contains Cl. CONSTITUTION:A semiconductor diamond contains Cl as a dopant element. The Cl concentration is 1X10<10>-1X10<20>[cm<-3>]. The semiconductor diamond is manufactured by a vapor thin-film composition method using a material gas such that the ratio of numbers of atoms, Cl and C, in the material gas Cl/C(%) is 0.001-10%. This enables a diamond semiconductor device, utilizing the PN junction, to be manufactured. |
