Memory semiconductor device employing a ferroelectric substance,申请号HK19970001076-传众专利搜索

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发明名称	Memory semiconductor device employing a ferroelectric substance
摘要
申请公布号	HK107697(A)	申请公布日期	1997.08.22
申请号	HK19970001076	申请日期	1997.06.26
申请人	SEIKO EPSON CORPORATION	发明人	KAZUHIRO TAKENAKA
分类号	H01L27/115;(IPC1-7):H01L27/115;H01G4/12;G11C11/22	主分类号	H01L27/115
代理机构		代理人
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