发明名称 MISSTYPE SEMICONDUCTOR DEVICE
摘要 PURPOSE:To prevent the breakage of the gate insulation film as well as to increase the voltage resistance by providing thick buried selective insulation films between the source layer, drain layer and the channel section respectively.
申请公布号 JPS52131483(A) 申请公布日期 1977.11.04
申请号 JP19760047698 申请日期 1976.04.28
申请人 HITACHI LTD 发明人 MEGURO REI
分类号 H01L21/32;H01L21/336;H01L21/76;H01L27/092;H01L29/06;H01L29/78 主分类号 H01L21/32
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