A METHOD AND A DEVICE FOR OXIDATION OF A SEMICONDUCTOR LAYER OF SiC

摘要

A device for oxidation of a semiconductor layer (6) of SiC at the surface thereof for forming an insulating surface layer of SiO2 comprises means (7) for heating said semiconductor layer and means (9) for feeding oxygen to the surface of said semiconductor layer for diffusing thereinto and reacting with the SiC in said surface layer while oxidating it to form SiO2 and C-oxides that diffuse out of said semiconductor layer. The device also comprises an ultraviolet source (10) arranged to illuminate said surface (8) of said semiconductor layer by ultraviolet light during at least a phase of said oxidation.