| 摘要 |
An ion implantation system is described having an ion source (330) coupled to a process chamber (318), and a workpiece handling assembly (320) having a workpiece support (348) that is mounted within the process chamber. The system implants ions into a photoresists coated workpiece to change the conductivity of the workpiece. An ion beam shield (410) is provided that is positioned between the ion source and the workpiece support during processing to prevent outgassed photoresist from coating portions of the ion source. |
