| 摘要 |
An input radio frequency signal to be amplified is fed to the gate terminals of parallel field effect power transistors (M1, M2) through impedance matching networks that comprise parallel resistor-capacitor combinations (R3, C3; R4, C4). The capacitor (C3, C4) is selected to that it is self-resonant at the frequency of operation, thereby preventing attenuation of the input signal at that frequency. A shunt resistor (R5) is coupled between the gates of the parallel transistors (M1, M2) to eliminate odd mode oscillations.
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