发明名称 |
METHOD FOR THE MANUFACTURE OF A CAPACITOR |
摘要 |
<p>Method for the manufacture of a capacitor. The dielectric deposit on the metallic elements is effected by polymerizing gaseous elements derived from the nitrogen remote plasma dissociation of an organo-silicon or organo-germanium-containing gas. The invention is also applicable in laminated stacked or wound type capacitors, power capacitors and wire capacitors.</p> |
申请公布号 |
EP0710395(B1) |
申请公布日期 |
1997.08.20 |
申请号 |
EP19940922936 |
申请日期 |
1994.07.19 |
申请人 |
THOMSON-CSF PASSIVE COMPONENTS "TPC" |
发明人 |
STEPHAN, RONAN;BRAMOULLE, MICHEL |
分类号 |
H01G4/08;H01G4/14;H01G4/30;H01G4/32;(IPC1-7):H01G4/08 |
主分类号 |
H01G4/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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