发明名称 METHOD FOR THE MANUFACTURE OF A CAPACITOR
摘要 <p>Method for the manufacture of a capacitor. The dielectric deposit on the metallic elements is effected by polymerizing gaseous elements derived from the nitrogen remote plasma dissociation of an organo-silicon or organo-germanium-containing gas. The invention is also applicable in laminated stacked or wound type capacitors, power capacitors and wire capacitors.</p>
申请公布号 EP0710395(B1) 申请公布日期 1997.08.20
申请号 EP19940922936 申请日期 1994.07.19
申请人 THOMSON-CSF PASSIVE COMPONENTS "TPC" 发明人 STEPHAN, RONAN;BRAMOULLE, MICHEL
分类号 H01G4/08;H01G4/14;H01G4/30;H01G4/32;(IPC1-7):H01G4/08 主分类号 H01G4/08
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