| 摘要 |
PURPOSE:To form a high-precision mask pattern on a substrate by multilayer resist method by using a uniform and dense silicon oxide film as an intermediate film formed under nonaqueous condition. CONSTITUTION:A mask pattern is formed on a substrate to be worked by multilyaer resist method that a flattening film, intermediate film, and resist film are successively formed on the substrate or an intermediate film and resist film are successively formed on the substrate and then a desired pattern is transferred successively from the upper layer. In this method, a silicon oxide film formed under nonaqueous condition is used as the intermediate film. |
